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| Semiconductor SRA2212M PNP Silicon Transistor Descriptions * Switching application * Interface circuit and driver circuit application Features * * * * With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRA2212M Marking 2212 Package Code TO-92M Outline Dimensions 4.00.1 unit : mm * Equivalent Circuit 3.00.1 C(OUT) 0.44 REF 0.52 REF B(IN) 14.00.40 R1 R1 = 100K E(COMMON) 1.27 Typ. 2.54 0.1. 123 0.7 Typ. 3.00.1 3.8 Min. 0.42 Typ. PIN Connections 1. Emitter 2. Collector 3. Base KSR-I019-000 1 SRA2212M Absolute maximum ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings -50 -50 -5 -100 400 150 -55 ~ 150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA - Min. Typ. Max. 120 -0.1 250 100 -500 -500 -0.3 - Unit nA nA V MHz K R1 * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-I019-000 2 |
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